2020 December Issue: Modeling and Simulation in Nanotechnology
- “Modeling and Simulation [The Editors’ Desk]”
Bing Sheu, Chang Gung University, Taiwan;
Xiaoning Jiang, North Carolina State University, USA.
- “Modeling and Simulation in Nanotechnology [Guest Editorial]”
M.P. Anantram, University of Washington, USA;
Jean-Pierre Leburton, University of Illinois, USA.
- “Nanoscale Transistor Variability Modeling”
Amita Rawat, Indian Institute of Technology Bombay, India;
Penugonda Harsha Vardhan, Indian Institute of Technology Bombay, India;
Udayan Ganguly, Indian Institute of Technology Bombay, India.
- “Monte Carlo Study of Si, Ge, and In53Ga0.47As n-Channel FinFET Scaling”
Aqyan A. Bhatti, University of Texas, USA;
Nupur Navlakha, University of Texas, USA;
Dax M. Crum, University of Texas, USA;
Sanjay K. Banerjee, University of Texas, USA;
Leonard F. Register, University of Texas, USA.
- “Modeling of Antiferromagnetic Dynamics”
Yuriy G. Semenov, North Carolina State University, USA;
Ki Wook Kim, North Carolina State University, USA.
- “2D Solid-State Nanopore Field-Effect Transistors”
Nagendra Athreya, University of Illinois, USA;
Aditya Sarathy, University of Illinois, USA;
Mingye Xiong, University of Illinois, USA;
Jean-Pierre Leburton, University of Illinois, USA.
- “From Fundamental First-Principle Calculations to Nanoengineering Applications”
James Kestyn, Stellar Science Ltd Co, USA;
Eric Polizzi, University of Massachusetts, USA.