2020 December Issue: Modeling and Simulation in Nanotechnology

 

  • “Modeling and Simulation [The Editors’ Desk]”

Bing Sheu, Chang Gung University, Taiwan;

Xiaoning Jiang, North Carolina State University, USA.

 

  • “Modeling and Simulation in Nanotechnology [Guest Editorial]”

M.P. Anantram, University of Washington, USA;

Jean-Pierre Leburton, University of Illinois, USA.

 

  • “Nanoscale Transistor Variability Modeling”

Amita Rawat, Indian Institute of Technology Bombay, India;

Penugonda Harsha Vardhan, Indian Institute of Technology Bombay, India;

Udayan Ganguly, Indian Institute of Technology Bombay, India.

 

  • “Monte Carlo Study of Si, Ge, and In53Ga0.47As n-Channel FinFET Scaling”

Aqyan A. Bhatti, University of Texas, USA;

Nupur Navlakha, University of Texas, USA;

Dax M. Crum, University of Texas, USA;

Sanjay K. Banerjee, University of Texas, USA;

Leonard F. Register, University of Texas, USA.

 

  • “Modeling of Antiferromagnetic Dynamics”

Yuriy G. Semenov, North Carolina State University, USA;

Ki Wook Kim, North Carolina State University, USA.

 

  • “2D Solid-State Nanopore Field-Effect Transistors”

Nagendra Athreya, University of Illinois, USA;

Aditya Sarathy, University of Illinois, USA;

Mingye Xiong, University of Illinois, USA;

Jean-Pierre Leburton, University of Illinois, USA.

 

  • “From Fundamental First-Principle Calculations to Nanoengineering Applications”

James Kestyn, Stellar Science Ltd Co, USA;

Eric Polizzi, University of Massachu­setts, USA.