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2. 2021 October Issue: Nanoferroelectrics

2021 October Issue: Nanoferroelectrics

•  “Nanoferroelectrics [The Editors’ Desk]”

Bing Sheu, Chang Gung University, Taiwan;

Xiaoning Jiang, North Carolina State University, USA.

 

• “Perspectives in Quantum Devices and Computational Nanotechnology [Highlights Senior Editor, Chao-Sung Lai]”

Jean-Pierre Leburton, University of Illinois, USA.

 

• “Nanoscale Ferroelectrics for Advanced Electronics and Microwave Applications [Guest Editorial]”

Luca Pierant, Università Politecnica delle Marche, Italy;

Davide Mencarelli, Università Politecnica delle Marche, Italy.

 

• “The Rise of Ferroelectricity at Nanoscale”

Martino Aldrigo, National Institute for Research and Development in Micro­technologies, Romania;

Daniela Dragoman, University of Bucharest, Romania;

Sergiu Iordanescu, National Institute for Research and Development in Micro­technologies, Romania;

Adrian Dinescu, National Institute for Research and Development in Micro­technologies, Romania;

Mircea Modreanu, Tyndall National Institute, Ireland.

 

• “Ferroelectricity in CMOS-Compatible Hafnium Oxides”

Dipjyoti Das, Korea Advanced Institute of Science and Technology, South Korea;

Asif Islam Khan, Georgia Institute of Technology, USA.

 

• “Advances in Neuromorphic Spin-Based Spiking Neural Networks”

Gaurav Verma, Indi­an Institute of Technology Roorkee, India;

Namita Bindal, Indi­an Institute of Technology Roorkee, India;

Arshid Nisar, Indi­an Institute of Technology Roorkee, India;

Seema Dhull, Indi­an Institute of Technology Roorkee, India;

Brajesh Kumar Kaushik, Indi­an Institute of Technology Roorkee, India.