2024 December Issue: Modelling and Simulation in Nanotechnology
- “The Editors’ Desk [The Editors’ Desk]”
Bing J. Sheu, Chang Gung University, Taiwan;
Shao-Ku Kao, Chang Gung University, Taiwan.
- “Multi-Physics Models and Simulation [Guest Editorial]”
Sagarika Mukesh, IBM Quantum, USA;
Yong-Hoon Kim, Korea Advanced Institute of Science and Technology (KAIST), South Korea.
- “A New Direction for First-Principles Device Simulations”
Yong-Hoon Kim, Korea Advanced Institute of Science and Technology (KAIST), South Korea;
Ryong-Gyu Lee, Korea Advanced Institute of Science and Technology (KAIST), South Korea.
- “A Computational Analysis on 5-Qubit Quantum Circuits Designed With Electron Spins in Silicon”
Junghee Ryu, University of Science and Technology, South Korea;
Hoon Ryu, Kumoh National Institute of Technology, South Korea.
- “In-Silico Analysis of High Refractive Index Materials Through Principles of Materials Design”
Sadasivan Shankar, Material Alchemy, USA;
Vishnu Shankar, Stanford University, USA;
William Goddard, California Institute of Technology, USA;
Saber Naserifar, California Institute of Technology, USA.
- “Are Emerging Machine Learning Models Dependable at the Nanoscales?”
Shanshan Liu, University of Electronic Science and Technology of China, China;
Ziheng Wang, Northeastern University, USA;
Zhen Gao, Tianjin University, China;
Pedro Reviriego, Universidad Politécnica de Madrid, Spain;
Farzad Niknia, Northeastern University, USA;
Xiaochen Tang, University of Electronic Science and Technology of China, China;
Jun Zhou, University of Electronic Science and Technology of China, China;
Fabrizio Lombardi, Northeastern University, USA.