2023 August Issue: Designing Future Quantum-Based Nanoelectronics

  • “The Editors’ Desk [The Editors’ Desk]”

Bing Sheu, Chang Gung University, Taiwan;

Shao-Ku Kao, Chang Gung University, Taiwan.

 

  • “Designing Future Quantum-Based Nanoelectronics Through Modeling and Simulation [Guest Editorial]”

Josef Weinbub, TU Wien, Austria;

Roza Kotlyar, Intel Corporation, USA.

 

  • “Atomistic Simulation of Nanoscale Devices”

Youseung Lee, Integrated Systems Laboratory, Switzerland;

Jiang Cao, Integrated Systems Laboratory, Switzerland;

Mathieu Luisier, Integrated Systems Laboratory, Switzerland.

 

  • ” Modeling 2D Material-Based Nanoelectronic Devices in the Presence of Defects”

Theresia Knobloch, TU Wien, Austria;

Dominic Waldhoer, TU Wien, Austria;

Tibor Grasser, TU Wien, Austria.

 

  • “Material, Device and Circuit-Compatible Modeling of Ferroelectric Devices”

Revanth Koduru, Purdue University, USA;

Tanmoy Kumar Paul, Purdue University, USA;

Sumeet Kumar Gupta, Purdue University, USA.

 

  • ” Review of Simulation Methods for Design of Spin Logic”

Dmitri E. Nikonov, Intel Corp, USA;

Hai Li, Intel Corp, USA;

Ian A. Young, Intel Corp, USA.